منابع مشابه
Optical characterization of oxide encapsulated silicon nanowires of various morphologies.
The optical properties of four different silicon nanowire structures were investigated. Two of the samples consisted of spheres of nanocrystalline silicon en-capsulated by silicon oxide nanowires, with other two consisting of crystalline silicon nanowires coated by silicon oxide shells. The nanostructures produced by oxide assisted growth consisted of spheres of crystalline silicon encapsulated...
متن کاملOptical Properties of Silicon Nanowires Fabricated by Environment-Friendly Chemistry
Silicon nanowires (SiNWs) were fabricated by metal-assisted chemical etching (MACE) where hydrofluoric acid (HF), which is typically used in this method, was changed into ammonium fluoride (NH4F). The structure and optical properties of the obtained SiNWs were investigated in details. The length of the SiNW arrays is about 2 μm for 5 min of etching, and the mean diameter of the SiNWs is between...
متن کاملOptical properties of crystalline-amorphous core-shell silicon nanowires.
The optical absorption in a nanowire heterostructure consisting of a crystalline silicon core surrounded by a conformal shell of amorphous silicon is studied. We show that they exhibit extremely high absorption of 95% at short wavelengths (λ < 550 nm) and a concomitant very low absorption of down to less than 2% at long wavelengths (λ > 780 nm). These results indicate that our nanowires do not ...
متن کاملSilicon Nanowires with Mesopores: Fabrication and Optical Properties
Silicon nanowires (SiNWs) are electrochemically porosified to generate mesopores in sizes of 2-50 nm, resulting in the creation of mesoporous silicon nanowires (mpSiNWs). The porosification imposes two characteristics on to SiNWs: an increase of surface areas in the porous profile and quantum confinement ascribed to the shrinkage of silicon skeletons. Since the first report on producing mpSiNWs...
متن کاملOptical absorption from an indirect transition in bismuth nanowires
M. R. Black,* P. L. Hagelstein, S. B. Cronin, Y. M. Lin, and M. S. Dresselhaus Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139-4307, USA Department of Physics, Harvard University, Cambridge, Massachusetts 02138, USA Department of Physics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139-4307, U...
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ژورنال
عنوان ژورنال: Journal of Applied Physics
سال: 2012
ISSN: 0021-8979,1089-7550
DOI: 10.1063/1.4739708